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 Standard Semiconductor Wet Processes


 

Process

Purpose

Step 1

Step 2

Step 3

Step 4

Step 5

Step 6

Step 7

Step 8

Step 9

Pre Diffusion Clean

Removal of light organics,silicon dioxide layer, particles, metals; protective oxide regrowth

Sulfuric

Quartz Bath

 

QDR

HF (50:1)

QDR

SC1

DI H2O Rinse

SC2

Quartz Bath

DI H2O Rinse

Dry

Nitride Etch

Etch Silicon Nitride Layer

HF (50:1)

QDR

Phosphoric

Nitride etch-special

Phosphoric

Nitride etch-special

QDR

SC1

QDR

Dry

Pre Gate Clean

Removal of light organics, silicon dioxide layer, and metals.

Sulfuric

Quartz Bath

QDR

HF (50:1)

DI H2O Rinse

SC2

Quartz Bath

DI H2O Rinse

Dry

Pre-metal Clean

Removal of light organics, particles, and silicon dioxide layer.

Sulfuric

Quartz Bath

QDR

SC1

DI H2O Rinse

HF (50:1)

DI H2O Rinse

Dry

Oxide Etch

Silicon etch, Polysilicon etch, Silicon Dioxide removal

HF

DI H2O Rinse

BOE

DI H2O Rinse

Dry

Photoresist Strip, Post Ash Clean, Post Implant Resist Strip, Post Etch Resist Strip

Positive Photoresist removal without etching silicon, dilicon dioxide, silicon nitride or SOI for nonmetal applications

Sulfuric

Quartz Bath

QDR

Sulfuric

Quartz Bath

QDR

Dry

Metal Liftoff

Negative removal of photoresist, metal

NMP(Down Flow) Stainless Steel

NMP(Ultrasonic) Stainless Steel

Acetone

IPA

Dry

KOH Etch

Bulk Silicon Etch

Sulfuric

Quartz Bath

QDR

KOH

QDR

Dry

 
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